CANKIRI KARATEKIN UNIVERSITY Bologna Information System


  • Course Information
  • Course Title Code Semester Laboratory+Practice (Hour) Pool Type ECTS
    Analog Electronic-I CHB106 SPRING 3+1 C 5
    Learning Outcomes
    1-Understands the basic structure, properties and working principles of P-N articulated circuit elements.
    2-Understands the structure, operation and characteristic of diodes and types, and applies the principles of direct current analysis to diode circuits.
    3-Recognizes BJT (Articulating Bipolar Transistors), comprehends its features and operation, applies direct current circuit analysis principles.
    4-Recognizes JFET and MOSFET (field effect transistors), comprehends its features and operation, applies direct current circuit analysis principles.
    5-Apply semiconductor circuit structures in communication applications
  • ECTS / WORKLOAD
  • ActivityPercentage

    (100)

    NumberTime (Hours)Total Workload (hours)
    Course Duration (Weeks x Course Hours)14456
    Classroom study (Pre-study, practice)14228
    Assignments0000
    Short-Term Exams (exam + preparation) 0000
    Midterm exams (exam + preparation)4014228
    Project0000
    Laboratory 0000
    Final exam (exam + preparation) 6014342
    0000
    Total Workload (hours)   154
    Total Workload (hours) / 30 (s)     5,13 ---- (5)
    ECTS Credit   5
  • Course Content
  • Week Topics Study Metarials
    1 Atomic structure and Semiconductivity K1. Chapter 1
    2 Diode structure and working principle K1. Chapter 1.5
    3 Diode Circuit Applications K1. Chapter 2
    4 Diode Communication applications K1. Chapter 2.7
    5 Transistor (BJT) structure and working principle K1. Chapter 4.2
    6 Transistor (BJT) boost effect K1. Chapter 4.4
    7 Transistor (BJT) circuit structures K1. Chapter 4.5-6
    8 Transistor (BJT) bias circuits K1. Chapter 5.3-8
    9 Transistor (BJT) bias circuits K1. Chapter 5.3-8
    10 Transistor (BJT) Communication applications K1. Chapter 5.11
    11 Field Effect Transistor (FET) structure and characteristic K1. Chapter 6.1-2
    12 Field Effect Transistor (FET) structure and characteristic K1. Chapter 6.2-3
    13 FET and MOSFET biasing circuits K1. Chapter 7.1-4
    14 FET Small signal analysis K1. Chapter 10
    Prerequisites There is no prerequisite for the course.
    Language of Instruction Turkish
    Responsible .Dr.Öğr.Üyesi Nurettin Gökşenli
    Instructors -
    Assistants -
    Resources K1. Boylestad R., Nashelsky L., (2004) Electronic Elements and Circuit Theory for Industrial Schools (5th Edition), National Education Press, Istanbul
    Supplementary Book YK1. Boylestad R., Nashelsky L., (2004) Electronic Elements and Circuit Theory for Industrial Schools (5th Edition), National Education Press, Istanbul
    Goals Introducing the materials and properties of semiconductors used in electronics and conducting the working principles and bias analysis of Diodes, BJT, FET and MOSFETs.
    Content AC and DC analysis of diode, BJT, FET and MOSFET circuits
  • Program Learning Outcomes
  • Program Learning Outcomes Level of Contribution
    1 Uses test equipment. 3
    2 Knows analog and digital theory. 3
    3 It has protocol knowledge. -
    4 Makes needs analysis. -
    5 It organizes work. -
    6 It solves the problem. 4
    7 Decides. 4
    8 It ensures system integrity. -
    9 Communicates. -
    10 It follows the technology. 3
    11 It researches, ventures and produces. -
    12 Knows teamwork and communicates with employees. -
    13 It is flexible and can learn by itself. -
    14 Observes and decides. -
    15 He takes risks. -
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