CANKIRI KARATEKIN UNIVERSITY Bologna Information System


  • Course Information
  • Course Title Code Semester Laboratory+Practice (Hour) Pool Type ECTS
    Point defects in solids FİZ551 FALL-SPRING 3+0 University E 6
    Learning Outcomes
    1-Provides general information about semiconductors.
    2-Indicates and compares the difference between the point defects and other defects
    3- Gives general information about Electron Spin Resonance (ESR) method
    4- Explains detailed information about Point Defects obtained by Electron Spin Resonance (ESR) method and uses this knowledge to produce the material.
  • ECTS / WORKLOAD
  • ActivityPercentage

    (100)

    NumberTime (Hours)Total Workload (hours)
    Course Duration (Weeks x Course Hours)14342
    Classroom study (Pre-study, practice)14570
    Assignments0000
    Short-Term Exams (exam + preparation) 0000
    Midterm exams (exam + preparation)4013030
    Project0000
    Laboratory 0000
    Final exam (exam + preparation) 6013030
    Other 0000
    Total Workload (hours)   172
    Total Workload (hours) / 30 (s)     5,73 ---- (6)
    ECTS Credit   6
  • Course Content
  • Week Topics Study Metarials
    1 What is a semiconductor?
    2 Structure of Point Defects
    3 Effective Mass Theory
    4 Simple Theory of Deep Level in Semiconductors ;
    5 Defect Migration and Diffusion
    6 Optical Properties
    7 Electrical Properties
    8 Midterm exams
    9 Carrier Emission and Recombination
    10 Electron Paramagnetic Resonance Spectroscopy
    11 Electron Paramagnetic Resonance Spectroscopy
    12 Electron Paramagnetic Resonance Method with Point Defects specified in the Basic Concepts
    13 Electron Paramagnetic Resonance Method with Point Defects specified in the Basic Concepts
    14 Electron Paramagnetic Resonance Method with Point Defects specified in the Basic Concepts
    15 Electron Paramagnetic Resonance Method with Point Defects specified in the Basic Concepts
    Prerequisites -
    Language of Instruction Turkish
    Coordinator Doç.Dr. Biray AŞIK
    Instructors -
    Assistants -
    Resources [1] Lannoo, M. (2012). Point defects in semiconductors I: theoretical aspects (Vol. 22). Springer Science & Business Media. [2] Bourgoin, J. (2012). Point defects in Semiconductors II: Experimental aspects(Vol. 35). Springer Science & Business Media. [3] Spaeth, Johann-Martin, and Harald Overhof. Point defects in semiconductors and insulators: determination of atomic and electronic structure from paramagnetic hyperfine interactions. Vol. 51. Springer Science & Business Media, 2003.
    Supplementary Book -
    Goals To Acquire knowledge about Point Defects in materials used in technology by Electron Spin Resonance (ESR) Methodts
    Content What is a semiconductor? Structure of Point Defects, Effective Mass Theory, Simple Theory of Deep Level in Semiconductors, Defect Migration and Diffusion, Optical Properties, Electrical Properties, Carrier Emission and Recombination, Electron Paramagnetic Resonance Spectroscopy, Electron Paramagnetic Resonance Method with Point Defects specified in the Basic Concepts
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