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Course Information

Course Title	Code	Semester	Laboratory+Practice (Hour)	Pool	Type	ECTS
Point defects in solids	FİZ551	FALL-SPRING	3+0	University	E	6

Learning Outcomes	1-Provides general information about semiconductors. 2-Indicates and compares the difference between the point defects and other defects 3- Gives general information about Electron Spin Resonance (ESR) method 4- Explains detailed information about Point Defects obtained by Electron Spin Resonance (ESR) method and uses this knowledge to produce the material.

ECTS / WORKLOAD

Activity	Percentage (100)	Number	Time (Hours)	Total Workload (hours)
Course Duration (Weeks x Course Hours)		14	3	42
Classroom study (Pre-study, practice)		14	5	70
Assignments	0	0	0	0
Short-Term Exams (exam + preparation)	0	0	0	0
Midterm exams (exam + preparation)	40	1	30	30
Project	0	0	0	0
Laboratory	0	0	0	0
Final exam (exam + preparation)	60	1	30	30
Other	0	0	0	0
Total Workload (hours)				172
Total Workload (hours) / 30 (s)				5,73 ---- (6)
ECTS Credit				6

Course Content

Week	Topics	Study Metarials
1	What is a semiconductor?
2	Structure of Point Defects
3	Effective Mass Theory
4	Simple Theory of Deep Level in Semiconductors ;
5	Defect Migration and Diffusion
6	Optical Properties
7	Electrical Properties
8	Midterm exams
9	Carrier Emission and Recombination
10	Electron Paramagnetic Resonance Spectroscopy
11	Electron Paramagnetic Resonance Spectroscopy
12	Electron Paramagnetic Resonance Method with Point Defects specified in the Basic Concepts
13	Electron Paramagnetic Resonance Method with Point Defects specified in the Basic Concepts
14	Electron Paramagnetic Resonance Method with Point Defects specified in the Basic Concepts
15	Electron Paramagnetic Resonance Method with Point Defects specified in the Basic Concepts

Prerequisites	-
Language of Instruction	Turkish
Coordinator	Doç.Dr. Biray AŞIK
Instructors	-
Assistants	-
Resources	[1] Lannoo, M. (2012). Point defects in semiconductors I: theoretical aspects (Vol. 22). Springer Science & Business Media. [2] Bourgoin, J. (2012). Point defects in Semiconductors II: Experimental aspects(Vol. 35). Springer Science & Business Media. [3] Spaeth, Johann-Martin, and Harald Overhof. Point defects in semiconductors and insulators: determination of atomic and electronic structure from paramagnetic hyperfine interactions. Vol. 51. Springer Science & Business Media, 2003.
Supplementary Book	-
Goals	To Acquire knowledge about Point Defects in materials used in technology by Electron Spin Resonance (ESR) Methodts
Content	What is a semiconductor? Structure of Point Defects, Effective Mass Theory, Simple Theory of Deep Level in Semiconductors, Defect Migration and Diffusion, Optical Properties, Electrical Properties, Carrier Emission and Recombination, Electron Paramagnetic Resonance Spectroscopy, Electron Paramagnetic Resonance Method with Point Defects specified in the Basic Concepts

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